Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor

This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in standard 180 nm CIS process. Through the optimization of photodiode geometry and utilization gates, proposed pixels achieve charge time less than 10 ns without requiring any process modifications. Moreover, gate structure significantly reduces floating diffusion capacitance, resulting an increased conversion gain 183 µV/e−. advancement enables to lowest reported 5.1 e− rms. To demonstrate effectiveness both optimizations, proof-of-concept is designed, taped-out characterized.